DOW XR-1541 | Krayden

Main features

E-Beam Patternable, Negative Tone
Etch Resistance Surface Treatment
High Purity Surface Treatment

Product Description

Dow Corning® XR-1541 E-Beam Resist is a hydrogen silsesquioxane (HSQ)-based negative-tone electron beam resist formulated for high-resolution lithography applications. Supplied as a semiconductor-grade HSQ resin dissolved in methyl isobutyl ketone (MIBK), it supports direct-write patterning with feature sizes as small as 6 nm. The material is processed to high purity with trace metal impurities below 10 ppb and can produce thin films from approximately 30 to 180 nm in a single spin-coated layer, depending on formulation. XR-1541 is commonly evaluated for mask fabrication and next-generation lithography processes where fine pattern definition, thin-film control, and aqueous-base development are important.

Key features

6 nm minimum feature size: Supports ultra-fine electron beam pattern definition for advanced lithography applications.
High-purity formulation: Processed to semiconductor-grade purity with trace metal impurities below 10 ppb.
Thin-film capability: Available in formulations that produce spin-coated film thicknesses from approximately 30 to 180 nm.

Applications / Suitable for

Mask making
Next-generation lithography processing
High-resolution electron beam patterning
Nanoscale feature fabrication

TDS, SDS & Technical Documents

Technical Specifications

General Properties

Refractive index

1.41

Additional Information

Technical properties

As-supplied / before-processing properties

Representative properties reported for the supplied electron beam resist formulation.

Property	Value	Unit	Method / condition
Minimum Feature Size	6	nm	Typical property
Edge Definition	3.3	nm	Typical property
Refractive Index	1.41	-	Typical property
Trace Metal Impurities	<10	ppb	Semiconductor-grade purity
Shelf Life at 5°C	6	months	Stored at 5°C
Spin-Coated Film Thickness	30-180	nm	Depending on formulation concentration